Projects

PROJECTS

Hetrojunction Bipolar Transistor

On September 30, 1997, a patent application was filed for a Hetrojunction Bipolar Transistor (HBT).

The transistor employs a hetrojunction structure to yield low base resistance to reduce noise while increasing speed and frequency of operation. Depending on the application, the device can be up to three times faster than conventional state-of-the-art bipolar transistors, while reducing noise up to two dB and increasing signal gain up to five times higher.

The development of this transistor represents a major advance in semiconductor science and design. Bipolar transistors are used in the manufacture of digital circuits such as cellular phones, personal computers and automotive circuitry. The demand for faster and more efficient signal processing has been a driving force behind the enormous prosperity of the world electronics market in the last decade.

This breakthrough design of the HBT will be used to create fast devices with superior performance in high speed digital circuits, high frequency microwave circuits and linear applications. To that end, marketing of the invention to prospective licensees will begin immediately concurrent with the fabrication of wafer prototypes to assist in providing licensees with empirical manufacturing data.