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NEWS RELEASE Dec 17, 1997

FOR IMMEDIATE RELEASE

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NATIONAL SCIENTIFIC CORPORATION (NSCT-OTC Bulletin Board)

December 17,1997

NATIONAL SCIENTIFIC ANNOUNCES PATENT FILING ON HIGH PERFORMANCE NMOS TRANSISTOR

Scottsdale, AZ. - Company Chairman, L. Lou Ross, announces that the company has filed patent application for a High Performance NMOS Transistor which represents a major advancement in silicon chips design for digital applications.

The new National Scientific designed SRAM addresses the needs of silicon manufacturers by providing an alternative to CMOS designs that is much more dense, faster and requires 50% less power than conventional NMOS SRAM technology.

The new cell's design eliminates the need for P transistors and delivers the following benefits:

The memory cell requires up to 25% less manufacturing processes than required by CMOS.
Chip size up to 33% smaller than CMOS.
Standby current requirement of 50% less than conventional NMOS of equivalent switching speed.
The write speed and switching noise of the cell are improved dramatically.
By using tunnel diodes, performance is increased without sacrificing chip size.

SRAM and DRAM memories are key and integral components of digital computing devices such as microcomputers, workstations, etc. which depend on ever increasing amount of memory to improve performance and any improvement in chip size mounts to a considerable reduction in cost.

Mr. Marc Messina, President of National Scientific says "The filing of patents on our NMOS transistor is an important development for National Scientific. It is a breakthrough that we believe will have a clear impact on computer memories manufacturing by enabling manufacturers to increase speed, performance, and miniaturization while reducing costs significantly. We are now in the process of manufacturing product samples and expect to deliver them to customers by early summer. We expect the advent of our new SRAM technology to provide a distinct market advantage for manufacturers who wish to employ it."

Ross adds, "This is our third patent filing in the last 90 days, following our On-chip Inductor and the Heterojunction Bipolar Transistor. It demonstrates again our team's ability to deliver on schedule multiple projects over the course of the last year. A patent filing for an On-chip Power Amp is planned for late January. Collectively, these products demonstrate NSC's broad product range and rapid development capabilities which deliver innovative products to the market and value to our investors."

National Scientific Corporation is engaged in the research and development of manufacturing processes and commercial products that utilize unique, patented and / or proprietary technologies. The Company's stock trades under the symbol "NSCT" on the OTC Bulletin Board.

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* This press release includes statements which may constitute forward-looking statements made pursuant to the safe harbor provision of the Private Securities Litigation Reform Act of 1995. This information may involve risk and uncertainties that could cause actual results to differ materially from the forward-looking statements.

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